Dislocation-Free GaN/AlGaN Double- Barrier Diodes Grown on Bulk GaN
نویسندگان
چکیده
While AlGaN quantum cascade electro-optic devices recently received particular interest, the behavior of such vertical devices is not well understood and their performance greatly lags behind that of horizontal devices. The RTD is a benchmark for any such quantum cascade/intersubband (ISB) device. While epitaxial quality of InGaN/AlGaN could be improved so far that blue laser diodes became possible, the fabrication of RTDs still suffers from instabilities that relate to the large defect density near such heterostructures.
منابع مشابه
وابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
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